RN1910FE,LF(CT

Part NumberRN1910FE,LF(CT

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS 2NPN PREBIAS 0.1W ES6

DatasheetRN1910,11FE Datasheet

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

To learn about the specification of RN1910FE,LF(CT, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN1910FE,LF(CT with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN1910FE,LF(CT.
We are offering RN1910FE,LF(CT for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN1910FE,LF(CT - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	RN1910,11FE Datasheet
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	4.7kOhms
Resistor - Emitter Base (R2)	-
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6

RN1910FE,LF(CT - Related Products

More >>

RN1968(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6,	View
IMH4AT110	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6,	View
NSVMUN5212DW1T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363,	View
FMG3AT148	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT5,	View
PQMH9Z	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 230mW Surface Mount DFN1010B-6, Automotive, AEC-Q101	View
SMUN5233DW1T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363,	View
UMG4NTR	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT5,	View
RN1963(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6,	View
DMC561050R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,	View
PEMH11,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666,	View
PUMH15,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP,	View
RN1908FE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6,	View

RN1910FE,LF(CT - Tags

RN1910FE,LF(CT RN1910FE,LF(CT PDF RN1910FE,LF(CT datasheet RN1910FE,LF(CT specification RN1910FE,LF(CT image RN1910FE,LF(CT India Renesas Electronics India RN1910FE,LF(CT buy RN1910FE,LF(CT RN1910FE,LF(CT price RN1910FE,LF(CT distributor RN1910FE,LF(CT supplier RN1910FE,LF(CT wholesales