RN1962TE85LF

Part NumberRN1962TE85LF

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS 2NPN PREBIAS 0.5W US6

DatasheetRN1961-66

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 500mW Surface Mount US6

To learn about the specification of RN1962TE85LF, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN1962TE85LF with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN1962TE85LF.
We are offering RN1962TE85LF for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN1962TE85LF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	RN1961-66
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	10kOhms
Resistor - Emitter Base (R2)	10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250MHz
Power - Max	500mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6

RN1962TE85LF - Related Products

More >>

RN1606(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SM6,	View
RN1908FE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6,	View
EMG5T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT5,	View
RN1964TE85LF	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6,	View
QSH29TR	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 70V 500mA 1.25W Surface Mount TSMT6 (SC-95),	View
RN1901FETE85LF	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6,	View
IMH21T110	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 20V 600mA 150MHz 300mW Surface Mount SMT6,	View
DDC143TU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363,	View
UMG8NTR	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount UMT5,	View
DMC266030R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini6-G4-B,	View
ADC144EUQ-13	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 100mA 250MHz 270mW Surface Mount SOT-363, Automotive, AEC-Q101	View
PRMH11Z	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 480mW Surface Mount DFN1412-6, Automotive, AEC-Q101	View

RN1962TE85LF - Tags

RN1962TE85LF RN1962TE85LF PDF RN1962TE85LF datasheet RN1962TE85LF specification RN1962TE85LF image RN1962TE85LF India Renesas Electronics India RN1962TE85LF buy RN1962TE85LF RN1962TE85LF price RN1962TE85LF distributor RN1962TE85LF supplier RN1962TE85LF wholesales