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Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet RN1961-66
Standard Package 3000
Manufacturer Toshiba Semiconductor and Storage
Series -
Packaging Tape & Reel (TR)
Part Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 500mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package US6
SMA5106
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DMC561040R
Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,
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RN1905FE,LF(CT
Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6,
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NSBC114EDP6T5G
ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963,
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