RN1965(TE85L,F)

Part NumberRN1965(TE85L,F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS 2NPN PREBIAS 0.2W US6

DatasheetRN1961-66

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6

To learn about the specification of RN1965(TE85L,F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN1965(TE85L,F) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN1965(TE85L,F).
We are offering RN1965(TE85L,F) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN1965(TE85L,F) - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	RN1961-66
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	2.2kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250MHz
Power - Max	200mW
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6

RN1965(TE85L,F) - Related Products

More >>

RN1961(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6,	View
PQMH11Z	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 230MHz 230mW Surface Mount DFN1010B-6, Automotive, AEC-Q101	View
DMC261060R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini5-G3-B,	View
NSB1706DMW5T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88A (SC-70-5/SOT-353),	View
SMUN5230DW1T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363,	View
EMH9T2R	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6,	View
DMC566050R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini6-F3-B,	View
QSH29TR	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 70V 500mA 1.25W Surface Mount TSMT6 (SC-95),	View
RN1704JE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV,	View
PEMH9,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666,	View
DMC261030R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount Mini5-G3-B,	View
SMUN5213DW1T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 187mW Surface Mount SC-88/SC70-6/SOT-363,	View

RN1965(TE85L,F) - Tags

RN1965(TE85L,F) RN1965(TE85L,F) PDF RN1965(TE85L,F) datasheet RN1965(TE85L,F) specification RN1965(TE85L,F) image RN1965(TE85L,F) India Renesas Electronics India RN1965(TE85L,F) buy RN1965(TE85L,F) RN1965(TE85L,F) price RN1965(TE85L,F) distributor RN1965(TE85L,F) supplier RN1965(TE85L,F) wholesales