RN2705JE(TE85L,F)

Part NumberRN2705JE(TE85L,F)

ManufacturerToshiba Semiconductor and Storage

DescriptionTRANS 2PNP PREBIAS 0.1W ESV

DatasheetRN2701JE-06JE

Package / CaseSOT-553

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionPre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ESV

To learn about the specification of RN2705JE(TE85L,F), please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN2705JE(TE85L,F) with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of RN2705JE(TE85L,F).
We are offering RN2705JE(TE85L,F) for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

RN2705JE(TE85L,F) - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet	RN2701JE-06JE
Standard Package	1
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
Transistor Type	2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1)	2.2kOhms
Resistor - Emitter Base (R2)	47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	200MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-553
Supplier Device Package	ESV

RN2705JE(TE85L,F) - Related Products

More >>

PUMB13,115	Nexperia USA Inc., Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount 6-TSSOP,	View
RN2705JE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ESV,	View
NSBA144EDP6T5G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 408mW Surface Mount SOT-963,	View
DDA123JU-7-F	Diodes Incorporated, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount SOT-363,	View
FMA1AT148	Rohm Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 300mW Surface Mount SMT5,	View
DMA561040R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B,	View
RN2962(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6,	View
RN2910FE,LF(CT	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6,	View
RN2709JE(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 100mW Surface Mount ESV,	View
DMA961040R	Panasonic Electronic Components, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 125mW Surface Mount SSMini5-F4-B,	View
MUN5135DW1T1G	ON Semiconductor, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363,	View
RN2601(TE85L,F)	Toshiba Semiconductor and Storage, Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6,	View

RN2705JE(TE85L,F) - Tags

RN2705JE(TE85L,F) RN2705JE(TE85L,F) PDF RN2705JE(TE85L,F) datasheet RN2705JE(TE85L,F) specification RN2705JE(TE85L,F) image RN2705JE(TE85L,F) India Renesas Electronics India RN2705JE(TE85L,F) buy RN2705JE(TE85L,F) RN2705JE(TE85L,F) price RN2705JE(TE85L,F) distributor RN2705JE(TE85L,F) supplier RN2705JE(TE85L,F) wholesales