RQ6E055BNTCR


RQ6E055BNTCR

Part NumberRQ6E055BNTCR

Manufacturer

Description

Datasheet

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RQ6E055BNTCR - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs25mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds355pF @ 15V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTSMT6 (SC-95)
Package / CaseSOT-23-6 Thin, TSOT-23-6

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