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RQ6E055BNTCR

RQ6E055BNTCR

Part NumberRQ6E055BNTCR

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 30V 5.5A TSMT

DatasheetRQ6E055BN

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 5.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)

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RQ6E055BNTCR - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RQ6E055BN
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	25mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	8.6nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	355pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TSMT6 (SC-95)
Package / Case	SOT-23-6 Thin, TSOT-23-6

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