RQ6E055BNTCR
RQ6E055BNTCR
Part Number RQ6E055BNTCR
Description MOSFET N-CH 30V 5.5A TSMT
Package / Case SOT-23-6 Thin, TSOT-23-6
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Lead Time To be Confirmed
Detailed Description N-Channel 30V 5.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)
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RQ6E055BNTCR - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RQ6E055BN
Standard Package 1
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 355pF @ 15V
FET Feature -
Power Dissipation (Max) 1.25W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSMT6 (SC-95)
Package / Case SOT-23-6 Thin, TSOT-23-6
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