RS1E200GNTB
RS1E200GNTB
Part Number RS1E200GNTB Description MOSFET N-CH 30V 20A 8-HSOP Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 20A (Ta) 3W (Ta), 25.1W (Tc) Surface Mount 8-HSOP
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RS1E200GNTB - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RS1E200GN Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 20A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 16.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 15V FET Feature - Power Dissipation (Max) 3W (Ta), 25.1W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-HSOP Package / Case 8-PowerTDFN
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