RS1E200GNTB
RS1E200GNTB
Part Number RS1E200GNTB
Description MOSFET N-CH 30V 20A 8-HSOP
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 20A (Ta) 3W (Ta), 25.1W (Tc) Surface Mount 8-HSOP
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RS1E200GNTB - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RS1E200GN
Standard Package 2500
Manufacturer Rohm Semiconductor
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16.8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 15V
FET Feature -
Power Dissipation (Max) 3W (Ta), 25.1W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN
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