RW1A013ZPT2R
RW1A013ZPT2R
Part Number RW1A013ZPT2R
Description MOSFET P-CH 12V 1.5A WEMT6
Package / Case SOT-563, SOT-666
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 12V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT
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RW1A013ZPT2R - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RW1A013ZP
Standard Package 1
Manufacturer Rohm Semiconductor
Series -
Packaging Cut Tape (CT)
Part Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 260mOhm @ 1.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 4.5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 6V
FET Feature -
Power Dissipation (Max) 400mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WEMT
Package / Case SOT-563, SOT-666
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