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RW1C026ZPT2CR


RW1C026ZPT2CR

Part NumberRW1C026ZPT2CR

Manufacturer

Description

Datasheet

Package / CaseSOT-563, SOT-666

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

RW1C026ZPT2CR - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusNot For New Designs
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs70mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds1250pF @ 10V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WEMT
Package / CaseSOT-563, SOT-666

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