RW1E015RPT2R
RW1E015RPT2R
Part Number RW1E015RPT2R
Description MOSFET P-CH 30V 1.5A WEMT6
Package / Case SOT-563, SOT-666
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 30V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT
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RW1E015RPT2R - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RW1E015RP
Standard Package 8000
Manufacturer Rohm Semiconductor
Series -
Packaging Tape & Reel (TR)
Part Status Not For New Designs
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 230pF @ 10V
FET Feature -
Power Dissipation (Max) 400mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WEMT
Package / Case SOT-563, SOT-666
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