SBSP52T1G


SBSP52T1G

Part NumberSBSP52T1G

Manufacturer

Description

Datasheet

Package / CaseTO-261-4, TO-261AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SBSP52T1G - Product Attributes

Categories Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Datasheet
Standard Package1000
ManufacturerON Semiconductor
Series-
PackagingTape & Reel (TR)
Part StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)80V
Vce Saturation (Max) @ Ib, Ic1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 500mA, 10V
Power - Max800mW
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223 (TO-261)

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SBSP52T1G - Tags

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