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SCT2750NYTB

SCT2750NYTB

Part NumberSCT2750NYTB

ManufacturerRohm Semiconductor

Description1700V .75 OHM 6A SIC FET

DatasheetSCT2750NY

Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 1700V 5.9A (Tc) 57W (Tc) Surface Mount TO-268

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SCT2750NYTB - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SCT2750NY
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1700V
Current - Continuous Drain (Id) @ 25°C	5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	975mOhm @ 1.7A, 18V
Vgs(th) (Max) @ Id	4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 18V
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	275pF @ 800V
FET Feature	-
Power Dissipation (Max)	57W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-268
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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