SCT2H12NYTB
SCT2H12NYTB
Part Number SCT2H12NYTB Description 1700V 1.2 OHM 4A SIC FET Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1700V 4A (Tc) 44W (Tc) Surface Mount TO-268
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SCT2H12NYTB - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SCT2H12NY Standard Package 1 Manufacturer Rohm Semiconductor Series - Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1700V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 18V Vgs(th) (Max) @ Id 4V @ 410µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 18V Vgs (Max) +22V, -6V Input Capacitance (Ciss) (Max) @ Vds 184pF @ 800V FET Feature - Power Dissipation (Max) 44W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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