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SCT2H12NYTB


SCT2H12NYTB

Part NumberSCT2H12NYTB

Manufacturer

Description

Datasheet

Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SCT2H12NYTB - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerRohm Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1700V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 18V
Vgs (Max)+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds184pF @ 800V
FET Feature-
Power Dissipation (Max)44W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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