SG2013J-883B

Part NumberSG2013J-883B

ManufacturerMicrosemi Corporation

DescriptionTRANS 7NPN DARL 50V 0.6A 16JDIP

DatasheetSG2000

Package / Case-

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionBipolar (BJT) Transistor Array 7 NPN Darlington 50V 600mA Through Hole 16-CDIP

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SG2013J-883B - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays

Datasheet

SG2000

Standard Package

100

Manufacturer

Microsemi Corporation

Series

Packaging

Tube

Part Status

Active

Transistor Type

7 NPN Darlington

Current - Collector (Ic) (Max)

600mA

Voltage - Collector Emitter Breakdown (Max)

50V

Vce Saturation (Max) @ Ib, Ic

1.9V @ 600µA, 500mA

Current - Collector Cutoff (Max)

DC Current Gain (hFE) (Min) @ Ic, Vce

900 @ 500mA, 2V

Power - Max

Frequency - Transition

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

Supplier Device Package

16-CDIP

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