Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI1012CR-T1-GE3

SI1012CR-T1-GE3

SI1012CR-T1-GE3

Part NumberSI1012CR-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 0.63A SC-75A

DatasheetSI1012CR-T1-GE3

Package / CaseSC-75, SOT-416

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 240mW (Ta) Surface Mount SC-75A

To learn about the specification of SI1012CR-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI1012CR-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI1012CR-T1-GE3.
We are offering SI1012CR-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI1012CR-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI1012CR-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	396mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	43pF @ 10V
FET Feature	-
Power Dissipation (Max)	240mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-75A
Package / Case	SC-75, SOT-416

SI1012CR-T1-GE3 - Related Products

	TSM2N100CH C5G	Taiwan Semiconductor Corporation, N-Channel 1000V 1.85A (Tc) 77W (Tc) Through Hole TO-251 (IPAK),	View
	IRFZ14SPBF	Vishay Siliconix, N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,	View
	SQJ872EP-T1_GE3	Vishay Siliconix, N-Channel 150V 24.5A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	R6009JNXC7G	Rohm Semiconductor, N-Channel 600V 9A (Tc) 53W (Tc) Through Hole TO-220FM,	View
	BSZ034N04LSATMA1	Infineon Technologies, N-Channel 40V 19A (Ta), 40A (Tc) 2.1W (Ta), 52W (Tc) Surface Mount PG-TSDSON-8-FL, Automotive, AEC-Q101, OptiMOS™	View
	IPT65R195G7XTMA1	Infineon Technologies, N-Channel 650V 14A (Tc) 97W (Tc) Surface Mount PG-HSOF-8-2, CoolMOS™ C7	View
	2V7002LT3G	ON Semiconductor, N-Channel 60V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236), Automotive, AEC-Q101	View
	BUK9610-100B,118	Nexperia USA Inc., N-Channel 100V 75A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	STB120N4F6	STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount D2PAK, DeepGATE™, STripFET™ VI	View
	IXFX360N15T2	IXYS, N-Channel 150V 360A (Tc) 1670W (Tc) Through Hole PLUS247™-3, GigaMOS™	View
	STD7NM80-1	STMicroelectronics, N-Channel 800V 6.5A (Tc) 90W (Tc) Through Hole I-PAK, MDmesh™	View
	IXFT170N25X3HV	IXYS, N-Channel 250V 170A (Tc) 960W (Tc) Surface Mount TO-268HV, HiPerFET™	View

SI1012CR-T1-GE3 - Tags

SI1012CR-T1-GE3 SI1012CR-T1-GE3 PDF SI1012CR-T1-GE3 datasheet SI1012CR-T1-GE3 specification SI1012CR-T1-GE3 image SI1012CR-T1-GE3 India Renesas Electronics India SI1012CR-T1-GE3 buy SI1012CR-T1-GE3 SI1012CR-T1-GE3 price SI1012CR-T1-GE3 distributor SI1012CR-T1-GE3 supplier SI1012CR-T1-GE3 wholesales