SI1025X-T1-GE3
SI1025X-T1-GE3
Part Number SI1025X-T1-GE3 Description MOSFET 2P-CH 60V 0.19A SC-89 Package / Case SOT-563, SOT-666Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 P-Channel (Dual) 60V 190mA 250mW Surface Mount SC-89-6
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SI1025X-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI1025X Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 190mA Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 15V Input Capacitance (Ciss) (Max) @ Vds 23pF @ 25V Power - Max 250mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-563, SOT-666 Supplier Device Package SC-89-6 Base Part Number SI1025
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