SI1026X-T1-GE3
SI1026X-T1-GE3
Part Number SI1026X-T1-GE3
Description MOSFET 2N-CH 60V 0.305A SC89-6
Package / Case SOT-563, SOT-666
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description Mosfet Array 2 N-Channel (Dual) 60V 305mA 250mW Surface Mount SC-89-6
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SI1026X-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet Si1026X
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 305mA
Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V
Power - Max 250mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SC-89-6
Base Part Number SI1026
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