SI1302DL-T1-GE3
SI1302DL-T1-GE3
Part Number SI1302DL-T1-GE3
Description MOSFET N-CH 30V 600MA SC-70-3
Package / Case SC-70, SOT-323
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3
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SI1302DL-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1302DL
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 480mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 280mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-3
Package / Case SC-70, SOT-323
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