SI1317DL-T1-GE3
SI1317DL-T1-GE3
Part Number SI1317DL-T1-GE3
Description MOSFET P-CH 20V 1.4A SC70
Package / Case SC-70, SOT-323
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 1.4A (Tc) 500mW (Tc) Surface Mount SOT-323
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SI1317DL-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1317DL-T1-GE3
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 150mOhm @ 1.4A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 272pF @ 10V
FET Feature -
Power Dissipation (Max) 500mW (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-323
Package / Case SC-70, SOT-323
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