SI1416EDH-T1-GE3
SI1416EDH-T1-GE3
Part Number SI1416EDH-T1-GE3 Description MOSFET N-CH 30V 3.9A SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 3.9A (Tc) 2.8W (Tc) Surface Mount SOT-363
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SI1416EDH-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1416EDH Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 58mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±12V FET Feature - Power Dissipation (Max) 2.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363
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SI1416EDH-T1-GE3 - Tags
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