SI1424EDH-T1-GE3
SI1424EDH-T1-GE3
Part Number SI1424EDH-T1-GE3 Description MOSFET N-CH 20V 4A SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 4A (Tc) 1.56W (Ta), 2.8W (Tc) Surface Mount
To learn about the specification of SI1424EDH-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI1424EDH-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI1424EDH-T1-GE3.
We are offering SI1424EDH-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI1424EDH-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI1424EDH-T1-GE3 Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 33mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 8V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 1.56W (Ta), 2.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363
SI1424EDH-T1-GE3 - Related ProductsMore >>
STW13N60M2 STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Through Hole TO-247, MDmesh™ II Plus
View
IPD60R600P7ATMA1 Infineon Technologies, N-Channel 650V 6A (Tc) 30W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7
View
STL24N60DM2 STMicroelectronics, N-Channel 600V 15A (Tc) 125W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ DM2
View
SIHB22N60ET1-GE3 Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount TO-263 (D²Pak),
View
STFW4N150 STMicroelectronics, N-Channel 1500V 4A (Tc) 63W (Tc) Through Hole ISOWATT-218FX, PowerMESH™
View
HUF75329D3ST ON Semiconductor, N-Channel 55V 20A (Tc) 128W (Tc) Surface Mount TO-252AA, UltraFET™
View
TK13A60D(STA4,Q,M) Toshiba Semiconductor and Storage, N-Channel 600V 13A (Ta) 50W (Tc) Through Hole TO-220SIS, π-MOSVII
View
SUM90140E-GE3 Vishay Siliconix, N-Channel 200V 90A (Tc) 375W (Tc) Surface Mount D²PAK (TO-263), ThunderFET®
View
STB5N80K5 STMicroelectronics, N-Channel 800V 4A (Tc) 60W (Tc) Surface Mount D2PAK, MDmesh™
View
FDD7N60NZTM ON Semiconductor, N-Channel 600V 5.5A (Tc) 90W (Tc) Surface Mount D-Pak, UniFET-II™
View
PSMN022-30PL,127 Nexperia USA Inc., N-Channel 30V 30A (Tc) 41W (Tc) Through Hole TO-220AB,
View
FDMC2674 ON Semiconductor, N-Channel 220V 1A (Ta), 7A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount 8-MLP (3.3x3.3), UniFET™
View
SI1424EDH-T1-GE3 - Tags
English
