SI1902DL-T1-GE3
SI1902DL-T1-GE3
Part Number SI1902DL-T1-GE3
Description MOSFET 2N-CH 20V 0.66A SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
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Lead Time To be Confirmed
Detailed Description Mosfet Array 2 N-Channel (Dual) 20V 660mA 270mW Surface Mount SC-70-6 (SOT-363)
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SI1902DL-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI1902DL
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 660mA
Rds On (Max) @ Id, Vgs 385mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 270mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-70-6 (SOT-363)
Base Part Number SI1902
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