SI1922EDH-T1-GE3
SI1922EDH-T1-GE3
Part Number SI1922EDH-T1-GE3 Description MOSFET 2N-CH 20V 1.3A SOT-363 Package / Case 6-TSSOP, SC-88, SOT-363Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6 (SOT-363)
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SI1922EDH-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet Si1922EDH Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.3A Rds On (Max) @ Id, Vgs 198mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds - Power - Max 1.25W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363) Base Part Number SI1922
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