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SI1922EDH-T1-GE3

SI1922EDH-T1-GE3

Part NumberSI1922EDH-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 20V 1.3A SOT-363

DatasheetSi1922EDH

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6 (SOT-363)

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SI1922EDH-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	Si1922EDH
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1.3A
Rds On (Max) @ Id, Vgs	198mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.25W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-70-6 (SOT-363)
Base Part Number	SI1922

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SI1922EDH-T1-GE3 - Tags

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