SI1926DL-T1-GE3
SI1926DL-T1-GE3
Part Number SI1926DL-T1-GE3 Description MOSFET 2N-CH 60V 0.37A SOT363 Package / Case 6-TSSOP, SC-88, SOT-363Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description Mosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Surface Mount SC-70-6 (SOT-363)
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SI1926DL-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI1926DL Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 370mA Rds On (Max) @ Id, Vgs 1.4Ohm @ 340mA, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 18.5pF @ 30V Power - Max 510mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-70-6 (SOT-363)
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