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SI1926DL-T1-GE3

SI1926DL-T1-GE3

Part NumberSI1926DL-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET 2N-CH 60V 0.37A SOT363

DatasheetSI1926DL

Package / Case6-TSSOP, SC-88, SOT-363

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Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array 2 N-Channel (Dual) 60V 370mA 510mW Surface Mount SC-70-6 (SOT-363)

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SI1926DL-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet	SI1926DL
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	370mA
Rds On (Max) @ Id, Vgs	1.4Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	18.5pF @ 30V
Power - Max	510mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-70-6 (SOT-363)

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