SI1926DL-T1-GE3


SI1926DL-T1-GE3

Part NumberSI1926DL-T1-GE3

Manufacturer

Description

Datasheet

Package / Case6-TSSOP, SC-88, SOT-363

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SI1926DL-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C370mA
Rds On (Max) @ Id, Vgs1.4Ohm @ 340mA, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds18.5pF @ 30V
Power - Max510mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-70-6 (SOT-363)

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SI1926DL-T1-GE3 - Tags

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