Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2301CDS-T1-E3

SI2301CDS-T1-E3

SI2301CDS-T1-E3

Part NumberSI2301CDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.1A SOT23-3

DatasheetSI2301CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2301CDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301CDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301CDS-T1-E3.
We are offering SI2301CDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2301CDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2301CDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 10V
FET Feature	-
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2301CDS-T1-E3 - Related Products

	SI8481DB-T1-E1	Vishay Siliconix, P-Channel 20V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6), TrenchFET® Gen III	View
	SI5419DU-T1-GE3	Vishay Siliconix, P-Channel 30V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-PowerPak® ChipFet (3x1.9), TrenchFET®	View
	CSD23280F3	Texas Instruments, P-Channel 12V 1.8A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	DMP2045U-7	Diodes Incorporated, P-Channel 20V 4.3A (Ta) 800mW (Ta) Surface Mount SOT-23,	View
	RZL025P01TR	Rohm Semiconductor, P-Channel 12V 2.5A (Ta) 1W (Ta) Surface Mount TUMT6,	View
	PMV100XPEAR	Nexperia USA Inc., P-Channel 20V 2.4A (Ta) 463mW (Ta), 1.9W (Tc) Surface Mount TO-236AB,	View
	SI7415DN-T1-E3	Vishay Siliconix, P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SI3443CDV-T1-E3	Vishay Siliconix, P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP, TrenchFET®	View
	RRR015P03TL	Rohm Semiconductor, P-Channel 30V 1.5A (Ta) 540mW (Ta) Surface Mount TSMT3,	View
	FDZ371PZ	ON Semiconductor, P-Channel 20V 3.7A (Ta) 1.7W (Ta) Surface Mount 4-WLCSP (1x1), PowerTrench®	View
	SSM3J56ACT,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount CST3, U-MOSVI	View
	SUD50P04-09L-E3	Vishay Siliconix, P-Channel 40V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View

SI2301CDS-T1-E3 - Tags

SI2301CDS-T1-E3 SI2301CDS-T1-E3 PDF SI2301CDS-T1-E3 datasheet SI2301CDS-T1-E3 specification SI2301CDS-T1-E3 image SI2301CDS-T1-E3 India Renesas Electronics India SI2301CDS-T1-E3 buy SI2301CDS-T1-E3 SI2301CDS-T1-E3 price SI2301CDS-T1-E3 distributor SI2301CDS-T1-E3 supplier SI2301CDS-T1-E3 wholesales