Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

SI2301CDS-T1-GE3

Part NumberSI2301CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.1A SOT23-3

DatasheetSI2301CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2301CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2301CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2301CDS-T1-GE3.
We are offering SI2301CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2301CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2301CDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	112mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	405pF @ 10V
FET Feature	-
Power Dissipation (Max)	860mW (Ta), 1.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2301CDS-T1-GE3 - Related Products

	SPD15P10PLGBTMA1	Infineon Technologies, P-Channel 100V 15A (Tc) 128W (Tc) Surface Mount PG-TO252-3, SIPMOS®	View
	CSD25484F4T	Texas Instruments, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	SI8425DB-T1-E1	Vishay Siliconix, P-Channel 20V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-WLCSP (1.6x1.6), TrenchFET®	View
	IXTH16P60P	IXYS, P-Channel 600V 16A (Tc) 460W (Tc) Through Hole TO-247 (IXTH), PolarP™	View
	RRH140P03GZETB	Rohm Semiconductor, P-Channel 30V 14A (Ta) 650mW (Ta) Surface Mount 8-SOP,	View
	RD3H200SNTL1	Rohm Semiconductor, N-Channel 45V 20A (Ta) 20W (Tc) Surface Mount TO-252,	View
	CSD22202W15	Texas Instruments, P-Channel 8V 10A (Ta) 1.5W (Ta) Surface Mount 9-DSBGA, NexFET™	View
	IRLHS2242TRPBF	Infineon Technologies, P-Channel 20V 7.2A (Ta), 15A (Tc) 2.1W (Ta), 9.6W (Tc) Surface Mount 6-PQFN (2x2), HEXFET®	View
	IPD042P03L3GATMA1	Infineon Technologies, P-Channel 30V 70A (Tc) 150W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	NTP2955G	ON Semiconductor, P-Channel 60V 2.4A (Ta) 2.4W (Ta), 62.5W (Tc) Through Hole TO-220AB,	View
	NTTFS3A08PZTAG	ON Semiconductor, P-Channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-WDFN (3.3x3.3),	View
	AO3403	Alpha & Omega Semiconductor Inc., P-Channel 30V 2.6A (Ta) 1.4W (Ta) Surface Mount SOT-23-3L,	View

SI2301CDS-T1-GE3 - Tags

SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 PDF SI2301CDS-T1-GE3 datasheet SI2301CDS-T1-GE3 specification SI2301CDS-T1-GE3 image SI2301CDS-T1-GE3 India Renesas Electronics India SI2301CDS-T1-GE3 buy SI2301CDS-T1-GE3 SI2301CDS-T1-GE3 price SI2301CDS-T1-GE3 distributor SI2301CDS-T1-GE3 supplier SI2301CDS-T1-GE3 wholesales