SI2302CDS-T1-E3
SI2302CDS-T1-E3
Part Number SI2302CDS-T1-E3 Description MOSFET N-CH 20V 2.6A SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 2.6A (Ta) 710mW (Ta) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2302CDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2302CDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2302CDS-T1-E3.
We are offering SI2302CDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2302CDS-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2302CDS Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 57mOhm @ 3.6A, 4.5V Vgs(th) (Max) @ Id 850mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 4.5V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 710mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2302CDS-T1-E3 - Related ProductsMore >>
TSM15N50CI C0G Taiwan Semiconductor Corporation, N-Channel 500V 14A (Tc) Through Hole ITO-220AB,
View
BSH105,215 Nexperia USA Inc., N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB,
View
SUD35N10-26P-E3 Vishay Siliconix, N-Channel 100V 35A (Tc) 8.3W (Ta), 83W (Tc) Surface Mount TO-252, TrenchFET®
View
STL15N65M5 STMicroelectronics, N-Channel 650V 10A (Tc) 52W (Tc) Surface Mount PowerFlat™ (5x6), MDmesh™ V
View
IPB054N08N3GATMA1 Infineon Technologies, N-Channel 80V 80A (Tc) 150W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
TN2524N8-G Microchip Technology, N-Channel 240V 360mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89),
View
STW12NK95Z STMicroelectronics, N-Channel 950V 10A (Tc) 230W (Tc) Through Hole TO-247-3, SuperMESH™
View
STD25NF10LT4 STMicroelectronics, N-Channel 100V 25A (Tc) 100W (Tc) Surface Mount DPAK, STripFET™ II
View
IRFH5300TRPBF Infineon Technologies, N-Channel 30V 40A (Ta), 100A (Tc) 3.6W (Ta), 250W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®
View
IRF8788TRPBF Infineon Technologies, N-Channel 30V 24A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
IXFK170N25X3 IXYS, N-Channel 250V 170A (Tc) 960W (Tc) Through Hole TO-264 (IXFK), HiPerFET™
View
NTMS4801NR2G ON Semiconductor, N-Channel 30V 7.5A (Ta) 800mW (Ta) Surface Mount 8-SOIC,
View
SI2302CDS-T1-E3 - Tags
English
