SI2304DDS-T1-GE3
SI2304DDS-T1-GE3
Part Number SI2304DDS-T1-GE3 Description MOSFET N-CH 30V 3.3A SOT23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 3.3A (Ta), 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2304DDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2304DDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2304DDS-T1-GE3.
We are offering SI2304DDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2304DDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2304DDS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.3A (Ta), 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 3.2A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 235pF @ 15V FET Feature - Power Dissipation (Max) 1.1W (Ta), 1.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2304DDS-T1-GE3 - Related ProductsMore >>
ZXM61N02FTA Diodes Incorporated, N-Channel 20V 1.7A (Ta) 625mW (Ta) Surface Mount SOT-23-3,
View
FQT4N25TF ON Semiconductor, N-Channel 250V 830mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4, QFET®
View
SIHH068N60E-T1-GE3 Vishay Siliconix, N-Channel 600V 34A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8,
View
FDS3572 ON Semiconductor, N-Channel 80V 8.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
STL12N65M2 STMicroelectronics, N-Channel 650V 5A (Tc) 48W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™
View
SUM90220E-GE3 Vishay Siliconix, N-Channel 200V 64A (Tc) 230W (Tc) Surface Mount D²PAK (TO-263), ThunderFET®
View
FQD13N06TM ON Semiconductor, N-Channel 60V 10A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak, QFET®
View
SI1050X-T1-GE3 Vishay Siliconix, N-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89-6, TrenchFET®
View
SI8416DB-T2-E1 Vishay Siliconix, N-Channel 8V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1), TrenchFET®
View
PSMN1R1-40BS,118 Nexperia USA Inc., N-Channel 40V 120A (Tc) 306W (Tc) Surface Mount D2PAK,
View
IRFS7734TRLPBF Infineon Technologies, N-Channel 75V 183A (Tc) 290W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®, StrongIRFET™
View
IPP65R125C7XKSA1 Infineon Technologies, N-Channel 650V 18A (Tc) 101W (Tc) Through Hole PG-TO220-3, CoolMOS™ C7
View
SI2304DDS-T1-GE3 - Tags
English
