Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2307CDS-T1-E3

SI2307CDS-T1-E3

SI2307CDS-T1-E3

Part NumberSI2307CDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 3.5A SOT23-3

DatasheetSI2307CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2307CDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2307CDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2307CDS-T1-E3.
We are offering SI2307CDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2307CDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2307CDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	88mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.2nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 15V
FET Feature	-
Power Dissipation (Max)	1.1W (Ta), 1.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2307CDS-T1-E3 - Related Products

	SSM3J15FV,L3F	Toshiba Semiconductor and Storage, P-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount VESM, π-MOSVI	View
	NVD2955T4G	ON Semiconductor, P-Channel 60V 12A (Ta) 55W (Ta) Surface Mount DPAK, Automotive, AEC-Q101	View
	IRLMS5703TRPBF	Infineon Technologies, P-Channel 30V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	FDMS4435BZ	ON Semiconductor, P-Channel 30V 9A (Ta), 18A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SI7115DN-T1-E3	Vishay Siliconix, P-Channel 150V 8.9A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	2SJ305TE85LF	Toshiba Semiconductor and Storage, P-Channel 30V 200mA (Ta) 200mW (Ta) Surface Mount SC-59,	View
	SI7465DP-T1-GE3	Vishay Siliconix, P-Channel 60V 3.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	SQJ401EP-T1_GE3	Vishay Siliconix, P-Channel 12V 32A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	CSD25484F4T	Texas Instruments, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	ZXMP10A16KTC	Diodes Incorporated, P-Channel 100V 3A (Ta) 2.15W (Ta) Surface Mount TO-252-3,	View
	DMG3401LSN-7	Diodes Incorporated, P-Channel 30V 3A (Ta) 800mW (Ta) Surface Mount SC-59,	View
	PMN30XPX	Nexperia USA Inc., P-Channel 20V 5.2A (Ta) 550mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP,	View

SI2307CDS-T1-E3 - Tags

SI2307CDS-T1-E3 SI2307CDS-T1-E3 PDF SI2307CDS-T1-E3 datasheet SI2307CDS-T1-E3 specification SI2307CDS-T1-E3 image SI2307CDS-T1-E3 India Renesas Electronics India SI2307CDS-T1-E3 buy SI2307CDS-T1-E3 SI2307CDS-T1-E3 price SI2307CDS-T1-E3 distributor SI2307CDS-T1-E3 supplier SI2307CDS-T1-E3 wholesales