SI2307CDS-T1-GE3
SI2307CDS-T1-GE3
Part Number SI2307CDS-T1-GE3 Description MOSFET P-CH 30V 3.5A SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2307CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2307CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2307CDS-T1-GE3.
We are offering SI2307CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2307CDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2307CDS Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 88mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 340pF @ 15V FET Feature - Power Dissipation (Max) 1.1W (Ta), 1.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2307CDS-T1-GE3 - Related ProductsMore >>
NTR4171PT1G ON Semiconductor, P-Channel 30V 2.2A (Ta) 480mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
SI3443CDV-T1-E3 Vishay Siliconix, P-Channel 20V 5.97A (Tc) 2W (Ta), 3.2W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
CSD22206W Texas Instruments, P-Channel 8V 5A (Ta) 1.7W (Ta) Surface Mount 9-DSBGA (1.5x1.5),
View
TSM3457CX6 RFG Taiwan Semiconductor Corporation, P-Channel 30V 5A (Ta) 2W (Ta) Surface Mount SOT-26,
View
DMG3401LSN-7 Diodes Incorporated, P-Channel 30V 3A (Ta) 800mW (Ta) Surface Mount SC-59,
View
SI4431CDY-T1-GE3 Vishay Siliconix, P-Channel 30V 9A (Tc) 2.5W (Ta), 4.2W (Tc) Surface Mount 8-SO, TrenchFET®
View
IRF7240TRPBF Infineon Technologies, P-Channel 40V 10.5A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
FDME510PZT ON Semiconductor, P-Channel 20V 6A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin, PowerTrench®
View
NVMS5P02R2G ON Semiconductor, P-Channel 20V 3.95A (Ta) Surface Mount 8-SOIC,
View
RT1E040RPTR Rohm Semiconductor, P-Channel 30V 4A (Ta) 550mW (Ta) Surface Mount 8-TSST,
View
IPB120P04P4L03ATMA1 Infineon Technologies, P-Channel 40V 120A (Tc) 136W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
SI3457CDV-T1-GE3 Vishay Siliconix, P-Channel 30V 5.1A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP, TrenchFET®
View
SI2307CDS-T1-GE3 - Tags
English
