Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2312BDS-T1-GE3

SI2312BDS-T1-GE3

SI2312BDS-T1-GE3

Part NumberSI2312BDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 20V 3.9A SOT23-3

DatasheetSi2312BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2312BDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2312BDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2312BDS-T1-GE3.
We are offering SI2312BDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2312BDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2312BDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	31mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 4.5V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2312BDS-T1-GE3 - Related Products

	BUK7Y59-60EX	Nexperia USA Inc., N-Channel 60V 17A (Tc) 37W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	IXFN90N85X	IXYS, N-Channel 850V 90A (Tc) 1200W (Tc) Chassis Mount SOT-227B, HiPerFET™	View
	SI7114ADN-T1-GE3	Vishay Siliconix, N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IPN50R800CEATMA1	Infineon Technologies, N-Channel 500V 7.6A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™ CE	View
	BBL4001-1E	ON Semiconductor, N-Channel 60V 74A (Ta) 2W (Ta), 35W (Tc) Through Hole TO-220-3 Fullpack/TO-220F-3SG,	View
	STW88N65M5-4	STMicroelectronics, N-Channel 650V 84A (Tc) 450W (Tc) Through Hole TO-247-4L, MDmesh™ M5	View
	TSM70N10CP ROG	Taiwan Semiconductor Corporation, N-Channel 100V 70A (Tc) 120W (Tc) Surface Mount TO-252, (D-Pak),	View
	IPD70R900P7SAUMA1	Infineon Technologies, N-Channel 700V 6A (Tc) 30.5W (Tc) Surface Mount PG-TO252-3, CoolMOS™ P7	View
	2N7002W-7-F	Diodes Incorporated, N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-323,	View
	STD120N4F6	STMicroelectronics, N-Channel 40V 80A (Tc) 110W (Tc) Surface Mount DPAK, DeepGATE™, STripFET™ VI	View
	DMN3051L-7	Diodes Incorporated, N-Channel 30V 5.8A (Ta) 700mW (Ta) Surface Mount SOT-23-3,	View
	2N7002BKVL	Nexperia USA Inc., N-Channel 60V 350mA (Ta) 370mW (Ta) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™	View

SI2312BDS-T1-GE3 - Tags

SI2312BDS-T1-GE3 SI2312BDS-T1-GE3 PDF SI2312BDS-T1-GE3 datasheet SI2312BDS-T1-GE3 specification SI2312BDS-T1-GE3 image SI2312BDS-T1-GE3 India Renesas Electronics India SI2312BDS-T1-GE3 buy SI2312BDS-T1-GE3 SI2312BDS-T1-GE3 price SI2312BDS-T1-GE3 distributor SI2312BDS-T1-GE3 supplier SI2312BDS-T1-GE3 wholesales