Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2316DS-T1-E3

SI2316DS-T1-E3

SI2316DS-T1-E3

Part NumberSI2316DS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 2.9A SOT23-3

DatasheetSI2316DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2316DS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2316DS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2316DS-T1-E3.
We are offering SI2316DS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2316DS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2316DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	215pF @ 15V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2316DS-T1-E3 - Related Products

	IRFI1310NPBF	Infineon Technologies, N-Channel 100V 24A (Tc) 56W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®	View
	TN2524N8-G	Microchip Technology, N-Channel 240V 360mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89),	View
	IPB110N20N3LFATMA1	Infineon Technologies, N-Channel 200V 88A (Tc) 250W (Tc) Surface Mount PG-TO263-3, OptiMOS™ 3	View
	SI2300DS-T1-GE3	Vishay Siliconix, N-Channel 30V 3.6A (Tc) 1.1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	STH270N8F7-2	STMicroelectronics, N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H²PAK, DeepGATE™, STripFET™ VII	View
	BUK9Y19-55B,115	Nexperia USA Inc., N-Channel 55V 46A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	STB55NF06LT4	STMicroelectronics, N-Channel 60V 55A (Tc) 95W (Tc) Surface Mount D2PAK, STripFET™ II	View
	IRFBE30STRLPBF	Vishay Siliconix, N-Channel 800V 4.1A (Tc) 125W (Tc) Surface Mount D2PAK,	View
	STW56N60DM2	STMicroelectronics, N-Channel 600V 50A (Tc) 360W (Tc) Through Hole TO-247, MDmesh™ DM2	View
	RD3S100CNTL1	Rohm Semiconductor, N-Channel 190V 10A (Tc) 85W (Tc) Surface Mount TO-252,	View
	APT44F80B2	Microsemi Corporation, N-Channel 800V 47A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2], POWER MOS 8™	View
	FDU3N40TU	ON Semiconductor, N-Channel 400V 2A (Tc) 30W (Tc) Through Hole I-PAK, UniFET™	View

SI2316DS-T1-E3 - Tags

SI2316DS-T1-E3 SI2316DS-T1-E3 PDF SI2316DS-T1-E3 datasheet SI2316DS-T1-E3 specification SI2316DS-T1-E3 image SI2316DS-T1-E3 India Renesas Electronics India SI2316DS-T1-E3 buy SI2316DS-T1-E3 SI2316DS-T1-E3 price SI2316DS-T1-E3 distributor SI2316DS-T1-E3 supplier SI2316DS-T1-E3 wholesales