Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2316DS-T1-E3

SI2316DS-T1-E3

SI2316DS-T1-E3

Part NumberSI2316DS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 2.9A SOT23-3

DatasheetSI2316DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2316DS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2316DS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2316DS-T1-E3.
We are offering SI2316DS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2316DS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2316DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	215pF @ 15V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2316DS-T1-E3 - Related Products

	IRF1404ZSTRLPBF	Infineon Technologies, N-Channel 40V 180A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®	View
	IXFQ60N50P3	IXYS, N-Channel 500V 60A (Tc) 1040W (Tc) Through Hole TO-3P, HiPerFET™, Polar3™	View
	RCD080N25TL	Rohm Semiconductor, N-Channel 250V 8A (Ta) 850mW (Ta), 20W (Tc) Surface Mount CPT3,	View
	FDP20N50	ON Semiconductor, N-Channel 500V 20A (Tc) 250W (Tc) Through Hole TO-220-3, UniFET™	View
	VN10LFTA	Diodes Incorporated, N-Channel 60V 150mA (Ta) 330mW (Ta) Surface Mount SOT-23-3,	View
	RJK0855DPB-00#J5	Renesas Electronics America, N-Channel 80V 30A (Ta) 60W (Tc) Surface Mount LFPAK,	View
	NVTFS4C25NTAG	ON Semiconductor, N-Channel 30V 10.1A (Ta), 22.1A (Tc) 3W (Ta), 14.3W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	FDMC86160	ON Semiconductor, N-Channel 100V 9A (Ta), 43A (Tc) 2.3W (Ta), 54W (Tc) Surface Mount Power33, PowerTrench®	View
	STL22N65M5	STMicroelectronics, N-Channel 650V 15A (Tc) 2.8W (Ta), 110W (Tc) Surface Mount PowerFlat™ (8x8) HV, MDmesh™ V	View
	FDMS86103L	ON Semiconductor, N-Channel 100V 12A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SIRA14DP-T1-GE3	Vishay Siliconix, N-Channel 30V 58A (Tc) 3.6W (Ta), 31.2W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	DMG3402L-7	Diodes Incorporated, N-Channel 30V 4A (Ta) 1.4W (Ta) Surface Mount SOT-23,	View

SI2316DS-T1-E3 - Tags

SI2316DS-T1-E3 SI2316DS-T1-E3 PDF SI2316DS-T1-E3 datasheet SI2316DS-T1-E3 specification SI2316DS-T1-E3 image SI2316DS-T1-E3 India Renesas Electronics India SI2316DS-T1-E3 buy SI2316DS-T1-E3 SI2316DS-T1-E3 price SI2316DS-T1-E3 distributor SI2316DS-T1-E3 supplier SI2316DS-T1-E3 wholesales