Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2316DS-T1-E3

SI2316DS-T1-E3

SI2316DS-T1-E3

Part NumberSI2316DS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 30V 2.9A SOT23-3

DatasheetSI2316DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2316DS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2316DS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2316DS-T1-E3.
We are offering SI2316DS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2316DS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2316DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	50mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	800mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	215pF @ 15V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2316DS-T1-E3 - Related Products

	ZXMN10A25KTC	Diodes Incorporated, N-Channel 100V 4.2A (Ta) 2.11W (Ta) Surface Mount TO-252-3,	View
	TN0104N8-G	Microchip Technology, N-Channel 40V 630mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89),	View
	STB26NM60N	STMicroelectronics, N-Channel 600V 20A (Tc) 140W (Tc) Surface Mount D2PAK, MDmesh™ II	View
	STH180N10F3-2	STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2Pak-2, STripFET™ III	View
	BSZ065N03LSATMA1	Infineon Technologies, N-Channel 30V 12A (Ta), 40A (Tc) 2.1W (Ta), 26W (Tc) Surface Mount PG-TSDSON-8-FL, OptiMOS™	View
	CSD19535KTTT	Texas Instruments, N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View
	SUD20N10-66L-GE3	Vishay Siliconix, N-Channel 100V 16.9A (Tc) 2.1W (Ta), 41.7W (Tc) Surface Mount TO-252, TrenchFET®	View
	IRLR3915TRPBF	Infineon Technologies, N-Channel 55V 30A (Tc) 120W (Tc) Surface Mount D-Pak, HEXFET®	View
	TK4R3A06PL,S4X	Toshiba Semiconductor and Storage, N-Channel 60V 68A (Tc) 36W (Tc) Through Hole TO-220SIS, U-MOSIX-H	View
	FDMS86104	ON Semiconductor, N-Channel 100V 7A (Ta), 16A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	TK39J60W,S1VQ	Toshiba Semiconductor and Storage, N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N), DTMOSIV	View
	DMT6007LFG-7	Diodes Incorporated, N-Channel 60V 15A (Ta), 80A (Tc) 2.2W (Ta), 62.5W (Tc) Surface Mount PowerDI3333-8,	View

SI2316DS-T1-E3 - Tags

SI2316DS-T1-E3 SI2316DS-T1-E3 PDF SI2316DS-T1-E3 datasheet SI2316DS-T1-E3 specification SI2316DS-T1-E3 image SI2316DS-T1-E3 India Renesas Electronics India SI2316DS-T1-E3 buy SI2316DS-T1-E3 SI2316DS-T1-E3 price SI2316DS-T1-E3 distributor SI2316DS-T1-E3 supplier SI2316DS-T1-E3 wholesales