Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2318CDS-T1-GE3

SI2318CDS-T1-GE3

SI2318CDS-T1-GE3

Part NumberSI2318CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 5.6A SOT-23

DatasheetSi2318CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2318CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2318CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2318CDS-T1-GE3.
We are offering SI2318CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2318CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2318CDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	42mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 20V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2318CDS-T1-GE3 - Related Products

	TK8P60W5,RVQ	Toshiba Semiconductor and Storage, N-Channel 600V 8A (Ta) 80W (Tc) Surface Mount DPAK, DTMOSIV	View
	FDS6690A	ON Semiconductor, N-Channel 30V 11A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®	View
	BSZ050N03MSGATMA1	Infineon Technologies, N-Channel 30V 15A (Ta), 40A (Tc) 2.1W (Ta), 48W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	FDBL0330N80	ON Semiconductor, N-Channel 80V 220A (Tc) 300W (Tc) Surface Mount 8-HPSOF, PowerTrench®	View
	IXFP14N85X	IXYS, N-Channel 850V 14A (Tc) 460W (Tc) Through Hole TO-220AB (IXFP), HiPerFET™	View
	2N7002K-TP	Micro Commercial Co, N-Channel 60V 340mA (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	SQS482EN-T1_GE3	Vishay Siliconix, N-Channel 30V 16A (Tc) 62W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IXTX4N300P3HV	IXYS, N-Channel 3000V 4A (Tc) 960W (Tc) Through Hole TO-247PLUS-HV,	View
	SSM3K44FS,LF	Toshiba Semiconductor and Storage, N-Channel 30V 100mA (Ta) 150mW (Ta) Surface Mount SSM,	View
	STB46N30M5	STMicroelectronics, N-Channel 300V 53A (Tc) 250W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, MDmesh™ V	View
	PSMN011-80YS,115	Nexperia USA Inc., N-Channel 80V 67A (Tc) 117W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	RSD200N05TL	Rohm Semiconductor, N-Channel 45V 20A (Ta) 20W (Tc) Surface Mount CPT3,	View

SI2318CDS-T1-GE3 - Tags

SI2318CDS-T1-GE3 SI2318CDS-T1-GE3 PDF SI2318CDS-T1-GE3 datasheet SI2318CDS-T1-GE3 specification SI2318CDS-T1-GE3 image SI2318CDS-T1-GE3 India Renesas Electronics India SI2318CDS-T1-GE3 buy SI2318CDS-T1-GE3 SI2318CDS-T1-GE3 price SI2318CDS-T1-GE3 distributor SI2318CDS-T1-GE3 supplier SI2318CDS-T1-GE3 wholesales