Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2318CDS-T1-GE3

SI2318CDS-T1-GE3

SI2318CDS-T1-GE3

Part NumberSI2318CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 5.6A SOT-23

DatasheetSi2318CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 5.6A (Tc) 1.25W (Ta), 2.1W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2318CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2318CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2318CDS-T1-GE3.
We are offering SI2318CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2318CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2318CDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	42mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 20V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2318CDS-T1-GE3 - Related Products

	IRFR8314TRPBF	Infineon Technologies, N-Channel 30V 90A (Tc) 125W (Tc) Surface Mount D-PAK (TO-252AA), HEXFET®	View
	SIHD5N50D-E3	Vishay Siliconix, N-Channel 500V 5.3A (Tc) 104W (Tc) Surface Mount D-PAK (TO-252AA),	View
	TK22E10N1,S1X	Toshiba Semiconductor and Storage, N-Channel 100V 52A (Tc) 72W (Tc) Through Hole TO-220, U-MOSVIII-H	View
	NTD4858N-35G	ON Semiconductor, N-Channel 25V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Through Hole I-PAK,	View
	RSJ301N10FRATL	Rohm Semiconductor, N-Channel 100V 30A (Ta) 50W (Ta) Surface Mount LPTS, Automotive, AEC-Q101	View
	2N7008-G	Microchip Technology, N-Channel 60V 230mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	RJU002N06T106	Rohm Semiconductor, N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
	STP40NF20	STMicroelectronics, N-Channel 200V 40A (Tc) 160W (Tc) Through Hole TO-220AB, STripFET™	View
	AONS32304	Alpha & Omega Semiconductor Inc., N-Channel 30V 40A (Ta), 140A (Tc) 6.2W (Ta), 78W (Tc) Surface Mount 8-DFN-EP (5x6),	View
	BSC027N06LS5ATMA1	Infineon Technologies, N-Channel 60V 100A (Tc) 83W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	ZVN4210GTA	Diodes Incorporated, N-Channel 100V 800mA (Ta) 2W (Ta) Surface Mount SOT-223,	View
	ZXMN6A07ZTA	Diodes Incorporated, N-Channel 60V 1.9A (Ta) 1.5W (Ta) Surface Mount SOT-89-3,	View

SI2318CDS-T1-GE3 - Tags

SI2318CDS-T1-GE3 SI2318CDS-T1-GE3 PDF SI2318CDS-T1-GE3 datasheet SI2318CDS-T1-GE3 specification SI2318CDS-T1-GE3 image SI2318CDS-T1-GE3 India Renesas Electronics India SI2318CDS-T1-GE3 buy SI2318CDS-T1-GE3 SI2318CDS-T1-GE3 price SI2318CDS-T1-GE3 distributor SI2318CDS-T1-GE3 supplier SI2318CDS-T1-GE3 wholesales