Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2323DDS-T1-GE3

SI2323DDS-T1-GE3

SI2323DDS-T1-GE3

Part NumberSI2323DDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 5.3A SOT-23

DatasheetSI2323DDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23

To learn about the specification of SI2323DDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2323DDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2323DDS-T1-GE3.
We are offering SI2323DDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2323DDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2323DDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	39mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1160pF @ 10V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2323DDS-T1-GE3 - Related Products

	ZXMP10A18GTA	Diodes Incorporated, P-Channel 100V 2.6A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	IRFR9014TRLPBF	Vishay Siliconix, P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	SSM3J355R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII	View
	TP0606N3-G	Microchip Technology, P-Channel 60V 320mA (Tj) 1W (Tc) Through Hole TO-92-3,	View
	SI8823EDB-T2-E1	Vishay Siliconix, P-Channel 20V 2.7A (Tc) 900mW (Tc) Surface Mount 4-MICRO FOOT® (0.8x0.8), TrenchFET® Gen III	View
	SI4401BDY-T1-GE3	Vishay Siliconix, P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	SIA485DJ-T1-GE3	Vishay Siliconix, P-Channel 150V 1.6A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single,	View
	DMP45H150DHE-13	Diodes Incorporated, P-Channel 450V 250mA (Tc) 13.9W (Tc) Surface Mount SOT-223,	View
	CSD23382F4	Texas Instruments, P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	SIA469DJ-T1-GE3	Vishay Siliconix, P-Channel 30V 12A (Tc) 15.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET® Gen III	View
	BMS3003-1E	ON Semiconductor, P-Channel 60V 78A (Ta) 2W (Ta), 40W (Tc) Through Hole TO-220F-3SG,	View
	FDS4675-F085	ON Semiconductor, P-Channel 40V 11A (Ta) 2.4W (Ta) Surface Mount 8-SOIC, Automotive, AEC-Q101, PowerTrench®	View

SI2323DDS-T1-GE3 - Tags

SI2323DDS-T1-GE3 SI2323DDS-T1-GE3 PDF SI2323DDS-T1-GE3 datasheet SI2323DDS-T1-GE3 specification SI2323DDS-T1-GE3 image SI2323DDS-T1-GE3 India Renesas Electronics India SI2323DDS-T1-GE3 buy SI2323DDS-T1-GE3 SI2323DDS-T1-GE3 price SI2323DDS-T1-GE3 distributor SI2323DDS-T1-GE3 supplier SI2323DDS-T1-GE3 wholesales