Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2323DS-T1-GE3

SI2323DS-T1-GE3

SI2323DS-T1-GE3

Part NumberSI2323DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 3.7A SOT23-3

DatasheetSi2323DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2323DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2323DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2323DS-T1-GE3.
We are offering SI2323DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2323DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2323DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Not For New Designs
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	39mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1020pF @ 10V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2323DS-T1-GE3 - Related Products

	DMP4047LFDE-7	Diodes Incorporated, P-Channel 40V 3.3A (Ta) 700mW (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	SSM6J801R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F, U-MOSVI	View
	SI7431DP-T1-GE3	Vishay Siliconix, P-Channel 200V 2.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	IXTK90P20P	IXYS, P-Channel 200V 90A (Tc) 890W (Tc) Through Hole TO-264 (IXTK), PolarP™	View
	SQ4431EY-T1_GE3	Vishay Siliconix, P-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®	View
	RZR040P01TL	Rohm Semiconductor, P-Channel 12V 4A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	SISS27ADN-T1-GE3	Vishay Siliconix, P-Channel 30V 50A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen III	View
	RSS070P05FRATB	Rohm Semiconductor, P-Channel 45V 7A (Ta) 2W (Ta) Surface Mount 8-SOP, Automotive, AEC-Q101	View
	DMG2301LK-7	Diodes Incorporated, P-Channel 20V 2.4A (Ta) 840mW (Ta) Surface Mount SOT-23, Automotive, AEC-Q101	View
	DMP2004K-7	Diodes Incorporated, P-Channel 20V 600mA (Ta) 550mW (Ta) Surface Mount SOT-23-3,	View
	SQS401ENW-T1_GE3	Vishay Siliconix, P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®	View
	NDS8434	ON Semiconductor, P-Channel 20V 6.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,	View

SI2323DS-T1-GE3 - Tags

SI2323DS-T1-GE3 SI2323DS-T1-GE3 PDF SI2323DS-T1-GE3 datasheet SI2323DS-T1-GE3 specification SI2323DS-T1-GE3 image SI2323DS-T1-GE3 India Renesas Electronics India SI2323DS-T1-GE3 buy SI2323DS-T1-GE3 SI2323DS-T1-GE3 price SI2323DS-T1-GE3 distributor SI2323DS-T1-GE3 supplier SI2323DS-T1-GE3 wholesales