Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2325DS-T1-GE3

SI2325DS-T1-GE3

SI2325DS-T1-GE3

Part NumberSI2325DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 150V 0.53A SOT-23

DatasheetSI2325DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2325DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2325DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2325DS-T1-GE3.
We are offering SI2325DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2325DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2325DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	510pF @ 25V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2325DS-T1-GE3 - Related Products

	PMV75UP,215	Nexperia USA Inc., P-Channel 20V 2.5A (Ta) 490mW (Ta), 5W (Tc) Surface Mount TO-236AB,	View
	SI4447ADY-T1-GE3	Vishay Siliconix, P-Channel 40V 7.2A (Tc) 4.2W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SI4465ADY-T1-GE3	Vishay Siliconix, P-Channel 8V 3W (Ta), 6.5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IRFU9024NPBF	Infineon Technologies, P-Channel 55V 11A (Tc) 38W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	CSD25310Q2	Texas Instruments, P-Channel 20V 20A (Ta) 2.9W (Ta) Surface Mount 6-WSON (2x2), NexFET™	View
	IRFU5305PBF	Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK (TO-251), HEXFET®	View
	SI4401BDY-T1-GE3	Vishay Siliconix, P-Channel 40V 8.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	ATP301-TL-H	ON Semiconductor, P-Channel 100V 28A (Ta) 70W (Tc) Surface Mount ATPAK,	View
	SQJ409EP-T1_GE3	Vishay Siliconix, P-Channel 40V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	RSS060P05FRATB	Rohm Semiconductor, P-Channel 45V 6A (Ta) 2W (Ta) Surface Mount 8-SOP, Automotive, AEC-Q101	View
	IXTN170P10P	IXYS, P-Channel 100V 170A (Tc) 890W (Tc) Chassis Mount SOT-227B, PolarP™	View
	SI4435DDY-T1-GE3	Vishay Siliconix, P-Channel 30V 11.4A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View

SI2325DS-T1-GE3 - Tags

SI2325DS-T1-GE3 SI2325DS-T1-GE3 PDF SI2325DS-T1-GE3 datasheet SI2325DS-T1-GE3 specification SI2325DS-T1-GE3 image SI2325DS-T1-GE3 India Renesas Electronics India SI2325DS-T1-GE3 buy SI2325DS-T1-GE3 SI2325DS-T1-GE3 price SI2325DS-T1-GE3 distributor SI2325DS-T1-GE3 supplier SI2325DS-T1-GE3 wholesales