Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2325DS-T1-GE3

SI2325DS-T1-GE3

SI2325DS-T1-GE3

Part NumberSI2325DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 150V 0.53A SOT-23

DatasheetSI2325DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2325DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2325DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2325DS-T1-GE3.
We are offering SI2325DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2325DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2325DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	510pF @ 25V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2325DS-T1-GE3 - Related Products

	IPD90P04P4L04ATMA1	Infineon Technologies, P-Channel 40V 90A (Tc) 125W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™	View
	IRFD9210PBF	Vishay Siliconix, P-Channel 200V 400mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	SI7137DP-T1-GE3	Vishay Siliconix, P-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	DMP31D0UFB4-7B	Diodes Incorporated, P-Channel 30V 540mA (Ta) 460mW (Ta) Surface Mount X2-DFN1006-3,	View
	ZVP4525ZTA	Diodes Incorporated, P-Channel 250V 205mA (Ta) 1.2W (Ta) Surface Mount SOT-89-3,	View
	SQM40P10-40L_GE3	Vishay Siliconix, P-Channel 100V 40A (Tc) 150W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®	View
	NTR2101PT1G	ON Semiconductor, P-Channel 8V 960mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	1HP04CH-TL-W	ON Semiconductor, P-Channel 100V 170mA (Ta) Surface Mount 3-CPH,	View
	SI7113ADN-T1-GE3	Vishay Siliconix, P-Channel 100V 10.8A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	DMG7401SFGQ-7	Diodes Incorporated, P-Channel 30V 9.8A (Ta) 940mW (Ta) Surface Mount PowerDI3333-8,	View
	SI7113DN-T1-E3	Vishay Siliconix, P-Channel 100V 13.2A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SQ4431EY-T1_GE3	Vishay Siliconix, P-Channel 30V 10.8A (Tc) 6W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®	View

SI2325DS-T1-GE3 - Tags

SI2325DS-T1-GE3 SI2325DS-T1-GE3 PDF SI2325DS-T1-GE3 datasheet SI2325DS-T1-GE3 specification SI2325DS-T1-GE3 image SI2325DS-T1-GE3 India Renesas Electronics India SI2325DS-T1-GE3 buy SI2325DS-T1-GE3 SI2325DS-T1-GE3 price SI2325DS-T1-GE3 distributor SI2325DS-T1-GE3 supplier SI2325DS-T1-GE3 wholesales