Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2333CDS-T1-GE3

SI2333CDS-T1-GE3

SI2333CDS-T1-GE3

Part NumberSI2333CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 7.1A SOT-23

DatasheetSi2333CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2333CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2333CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2333CDS-T1-GE3.
We are offering SI2333CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2333CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2333CDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	35mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1225pF @ 6V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2333CDS-T1-GE3 - Related Products

	SI1403BDL-T1-GE3	Vishay Siliconix, P-Channel 20V 1.5A (Ta) 625mW (Ta) Surface Mount SC-70-6, TrenchFET®	View
	FDG316P	ON Semiconductor, P-Channel 30V 1.6A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®	View
	NDT2955	ON Semiconductor, P-Channel 60V 2.5A (Ta) 3W (Ta) Surface Mount SOT-223-4,	View
	FDN302P	ON Semiconductor, P-Channel 20V 2.4A (Ta) 500mW (Ta) Surface Mount SuperSOT-3, PowerTrench®	View
	MCH3377-TL-W	ON Semiconductor, P-Channel 20V 3A (Ta) 1W (Ta) Surface Mount 3-MCPH,	View
	RF6C055BCTCR	Rohm Semiconductor, P-Channel 20V 5.5A (Ta) 1W (Tc) Surface Mount TUMT6,	View
	SUM90P10-19L-E3	Vishay Siliconix, P-Channel 100V 90A (Tc) 13.6W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	FDMC86139P	ON Semiconductor, P-Channel 100V 4.4A (Ta), 15A (Tc) 2.3W (Ta), 40W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®	View
	SI4143DY-T1-GE3	Vishay Siliconix, P-Channel 30V 25.3A (Tc) 6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SI7655ADN-T1-GE3	Vishay Siliconix, P-Channel 20V 40A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET®	View
	TP0604N3-G	Microchip Technology, P-Channel 40V 430mA (Tj) 740mW (Ta) Through Hole TO-92-3,	View
	BSS223PWH6327XTSA1	Infineon Technologies, P-Channel 20V 390mA (Ta) 250mW (Ta) Surface Mount PG-SOT323-3, OptiMOS™	View

SI2333CDS-T1-GE3 - Tags

SI2333CDS-T1-GE3 SI2333CDS-T1-GE3 PDF SI2333CDS-T1-GE3 datasheet SI2333CDS-T1-GE3 specification SI2333CDS-T1-GE3 image SI2333CDS-T1-GE3 India Renesas Electronics India SI2333CDS-T1-GE3 buy SI2333CDS-T1-GE3 SI2333CDS-T1-GE3 price SI2333CDS-T1-GE3 distributor SI2333CDS-T1-GE3 supplier SI2333CDS-T1-GE3 wholesales