Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2333DDS-T1-GE3

SI2333DDS-T1-GE3

SI2333DDS-T1-GE3

Part NumberSI2333DDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 6A SOT23

DatasheetSi2333DDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2333DDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2333DDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2333DDS-T1-GE3.
We are offering SI2333DDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2333DDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	Si2333DDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	28mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1275pF @ 6V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2333DDS-T1-GE3 - Related Products

	SI7317DN-T1-GE3	Vishay Siliconix, P-Channel 150V 2.8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SI4483ADY-T1-GE3	Vishay Siliconix, P-Channel 30V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) Surface Mount 8-SO, TrenchFET®	View
	CSD23382F4	Texas Instruments, P-Channel 12V 3.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™	View
	NVTFS5124PLTWG	ON Semiconductor, P-Channel 60V 2.4A (Ta) 3W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	SI4447DY-T1-E3	Vishay Siliconix, P-Channel 40V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SO, TrenchFET®	View
	FDY100PZ	ON Semiconductor, P-Channel 20V 350mA (Ta) 625mW (Ta) Surface Mount SC-89-3, PowerTrench®	View
	SUP53P06-20-E3	Vishay Siliconix, P-Channel 60V 9.2A (Ta), 53A (Tc) 3.1W (Ta), 104.2W (Tc) Through Hole TO-220AB, TrenchFET®	View
	FQD7P20TM	ON Semiconductor, P-Channel 200V 5.7A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount D-Pak, QFET®	View
	SSM3J327R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 3.9A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	SI8489EDB-T2-E1	Vishay Siliconix, P-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot, TrenchFET®	View
	DMS2085LSD-13	Diodes Incorporated, P-Channel 20V 3.3A (Ta) 1.1W (Ta) Surface Mount 8-SO,	View
	SSM3J35CT,L3F	Toshiba Semiconductor and Storage, P-Channel 20V 100mA (Ta) 100mW (Ta) Surface Mount CST3, π-MOSVI	View

SI2333DDS-T1-GE3 - Tags

SI2333DDS-T1-GE3 SI2333DDS-T1-GE3 PDF SI2333DDS-T1-GE3 datasheet SI2333DDS-T1-GE3 specification SI2333DDS-T1-GE3 image SI2333DDS-T1-GE3 India Renesas Electronics India SI2333DDS-T1-GE3 buy SI2333DDS-T1-GE3 SI2333DDS-T1-GE3 price SI2333DDS-T1-GE3 distributor SI2333DDS-T1-GE3 supplier SI2333DDS-T1-GE3 wholesales