Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2337DS-T1-E3

SI2337DS-T1-E3

SI2337DS-T1-E3

Part NumberSI2337DS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 80V 2.2A SOT23-3

DatasheetSI2337DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2337DS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2337DS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2337DS-T1-E3.
We are offering SI2337DS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2337DS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2337DS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 40V
FET Feature	-
Power Dissipation (Max)	760mW (Ta), 2.5W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2337DS-T1-E3 - Related Products

	RQ3E120ATTB	Rohm Semiconductor, P-Channel 30V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3),	View
	SI7309DN-T1-E3	Vishay Siliconix, P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	TPS1100D	Texas Instruments, P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC,	View
	SQS401EN-T1_GE3	Vishay Siliconix, P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SQ2361ES-T1_GE3	Vishay Siliconix, P-Channel 60V 2.8A (Tc) 2W (Tc) Surface Mount, Automotive, AEC-Q101, TrenchFET®	View
	FDD4141	ON Semiconductor, P-Channel 40V 10.8A (Ta), 50A (Tc) 2.4W (Ta), 69W (Tc) Surface Mount D-PAK (TO-252AA), PowerTrench®	View
	IRFR9220PBF	Vishay Siliconix, P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	SI7309DN-T1-E3	Vishay Siliconix, P-Channel 60V 8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	CPH3362-TL-W	ON Semiconductor, P-Channel 100V 700mA (Ta) 1W (Ta) Surface Mount 3-CPH,	View
	SQJ463EP-T1_GE3	Vishay Siliconix, P-Channel 40V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	BSS84LT1G	ON Semiconductor, P-Channel 50V 130mA (Ta) 225mW (Ta) Surface Mount SOT-23-3 (TO-236),	View
	IRFHS9301TRPBF	Infineon Technologies, P-Channel 30V 6A (Ta), 13A (Tc) 2.1W (Ta) Surface Mount 6-PQFN (2x2), HEXFET®	View

SI2337DS-T1-E3 - Tags

SI2337DS-T1-E3 SI2337DS-T1-E3 PDF SI2337DS-T1-E3 datasheet SI2337DS-T1-E3 specification SI2337DS-T1-E3 image SI2337DS-T1-E3 India Renesas Electronics India SI2337DS-T1-E3 buy SI2337DS-T1-E3 SI2337DS-T1-E3 price SI2337DS-T1-E3 distributor SI2337DS-T1-E3 supplier SI2337DS-T1-E3 wholesales