Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2342DS-T1-GE3

SI2342DS-T1-GE3

SI2342DS-T1-GE3

Part NumberSI2342DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 8V 6A SOT-23

DatasheetSI2342DS-T1-GE3

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 8V 6A (Tc) 2.5W (Tc) Surface Mount SOT-23

To learn about the specification of SI2342DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2342DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2342DS-T1-GE3.
We are offering SI2342DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2342DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2342DS-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	8V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	17mOhm @ 7.2A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.8nC @ 4.5V
Vgs (Max)	±5V
Input Capacitance (Ciss) (Max) @ Vds	1070pF @ 4V
FET Feature	-
Power Dissipation (Max)	2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2342DS-T1-GE3 - Related Products

	NVMJS1D3N04CTWG	ON Semiconductor, N-Channel 40V 41A (Ta), 235A (Tc) 3.8W (Ta), 128W (Tc) Surface Mount 8-LFPAK, Automotive, AEC-Q101	View
	IRLZ14SPBF	Vishay Siliconix, N-Channel 60V 10A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount D2PAK,	View
	PSMN130-200D,118	Nexperia USA Inc., N-Channel 200V 20A (Tc) 150W (Tc) Surface Mount DPAK, TrenchMOS™	View
	IRLR2905TRLPBF	Infineon Technologies, N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	TPH7R204PL,LQ	Toshiba Semiconductor and Storage, N-Channel 40V 48A (Tc) 69W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H	View
	IPD048N06L3GBTMA1	Infineon Technologies, N-Channel 60V 90A (Tc) 115W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	IRL1004PBF	Infineon Technologies, N-Channel 40V 130A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	STB13N60M2	STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Surface Mount D2PAK, MDmesh™ II Plus	View
	IPW60R125P6XKSA1	Infineon Technologies, N-Channel 600V 30A (Tc) 219W (Tc) Through Hole PG-TO247-3, CoolMOS™ P6	View
	NTD4809NT4G	ON Semiconductor, N-Channel 30V 9.6A (Ta), 58A (Tc) 1.4W (Ta), 52W (Tc) Surface Mount DPAK,	View
	TK100A06N1,S4X	Toshiba Semiconductor and Storage, N-Channel 60V 100A (Tc) 45W (Tc) Through Hole TO-220SIS, U-MOSVIII-H	View
	RU1C002UNTCL	Rohm Semiconductor, N-Channel 20V 200mA (Ta) 150mW (Ta) Surface Mount UMT3F,	View

SI2342DS-T1-GE3 - Tags

SI2342DS-T1-GE3 SI2342DS-T1-GE3 PDF SI2342DS-T1-GE3 datasheet SI2342DS-T1-GE3 specification SI2342DS-T1-GE3 image SI2342DS-T1-GE3 India Renesas Electronics India SI2342DS-T1-GE3 buy SI2342DS-T1-GE3 SI2342DS-T1-GE3 price SI2342DS-T1-GE3 distributor SI2342DS-T1-GE3 supplier SI2342DS-T1-GE3 wholesales