SI2365EDS-T1-GE3
SI2365EDS-T1-GE3
Part Number SI2365EDS-T1-GE3 Description MOSFET P-CH 20V 5.9A TO-236 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236
To learn about the specification of SI2365EDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2365EDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2365EDS-T1-GE3.
We are offering SI2365EDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2365EDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2365EDS Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 8V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 1W (Ta), 1.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236 Package / Case TO-236-3, SC-59, SOT-23-3
SI2365EDS-T1-GE3 - Related ProductsMore >>
DMG3415UFY4Q-7 Diodes Incorporated, P-Channel 16V 2.5A (Ta) 650mW (Ta) Surface Mount X2-DFN2015-3,
View
DMP3036SSS-13 Diodes Incorporated, P-Channel 30V 19.5A (Tc) 1.4W (Ta) Surface Mount 8-SO,
View
DMP2021UFDE-7 Diodes Incorporated, P-Channel 20V 11.1A (Ta) 1.9W (Ta) Surface Mount U-DFN2020-6 (Type E),
View
SI7415DN-T1-GE3 Vishay Siliconix, P-Channel 60V 3.6A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®
View
BSP317PH6327XTSA1 Infineon Technologies, P-Channel 250V 430mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
RZQ050P01TR Rohm Semiconductor, P-Channel 12V 5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95),
View
DMP56D0UFB-7B Diodes Incorporated, P-Channel 50V 200mA (Ta) 425mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),
View
IRF7205TRPBF Infineon Technologies, P-Channel 30V 4.6A (Ta) 2.5W (Tc) Surface Mount 8-SO, HEXFET®
View
TT8U2TR Rohm Semiconductor, P-Channel 20V 2.4A (Ta) 1.25W (Ta) Surface Mount 8-TSST,
View
DMP10H400SEQ-13 Diodes Incorporated, P-Channel 100V 2.3A (Ta), 6A (Tc) 2W (Ta), 13.7W (Tc) Surface Mount SOT-223,
View
PMCM6501VPEZ Nexperia USA Inc., P-Channel 12V 6.2A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x.98),
View
TPH1R712MD,L1Q Toshiba Semiconductor and Storage, P-Channel 20V 60A (Tc) 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVI
View
SI2365EDS-T1-GE3 - Tags
English
