SI3442BDV-T1-E3
SI3442BDV-T1-E3
Part Number SI3442BDV-T1-E3
Description MOSFET N-CH 20V 3A 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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Lead Time To be Confirmed
Detailed Description N-Channel 20V 3A (Ta) 860mW (Ta) Surface Mount 6-TSOP
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SI3442BDV-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3442BDV
Standard Package 3000
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 295pF @ 10V
FET Feature -
Power Dissipation (Max) 860mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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