Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3459BDV-T1-GE3

SI3459BDV-T1-GE3

SI3459BDV-T1-GE3

Part NumberSI3459BDV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 2.9A 6-TSOP

DatasheetSI3459BDV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 2.9A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3459BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3459BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3459BDV-T1-GE3.
We are offering SI3459BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3459BDV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3459BDV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	216mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 30V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 3.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3459BDV-T1-GE3 - Related Products

	IRF6215STRLPBF	Infineon Technologies, P-Channel 150V 13A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount D2PAK, HEXFET®	View
	IRFD9220PBF	Vishay Siliconix, P-Channel 200V 560mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP,	View
	IRF5210STRLPBF	Infineon Technologies, P-Channel 100V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK, HEXFET®	View
	SSM6J511NU,LF	Toshiba Semiconductor and Storage, P-Channel 12V 14A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVII	View
	ZXMP7A17GQTA	Diodes Incorporated, P-Channel 70V 2.6A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	TSM3481CX6 RFG	Taiwan Semiconductor Corporation, P-Channel 30V 5.7A (Ta) 1.6W (Ta) Surface Mount SOT-26,	View
	TSM500P02CX RFG	Taiwan Semiconductor Corporation, P-Channel 20V 4.7A (Tc) 1.56W (Tc) Surface Mount SOT-23,	View
	DMP4065S-7	Diodes Incorporated, P-Channel 40V 2.4A (Ta) 720mW (Ta) Surface Mount SOT-23,	View
	IRFR9210PBF	Vishay Siliconix, P-Channel 200V 1.9A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,	View
	CMUDM8001 TR	Central Semiconductor Corp, P-Channel 20V 100mA (Ta) 250mW (Ta) Surface Mount SOT-523,	View
	MTM761100LBF	Panasonic Electronic Components, P-Channel 12V 4A (Ta) 700mW (Ta) Surface Mount WSMini6-F1-B,	View
	TSM150P03PQ33 RGG	Taiwan Semiconductor Corporation, P-Channel 30V 36A (Tc) 27.8W (Tc) Surface Mount 8-PDFN (3x3),	View

SI3459BDV-T1-GE3 - Tags

SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 PDF SI3459BDV-T1-GE3 datasheet SI3459BDV-T1-GE3 specification SI3459BDV-T1-GE3 image SI3459BDV-T1-GE3 India Renesas Electronics India SI3459BDV-T1-GE3 buy SI3459BDV-T1-GE3 SI3459BDV-T1-GE3 price SI3459BDV-T1-GE3 distributor SI3459BDV-T1-GE3 supplier SI3459BDV-T1-GE3 wholesales