Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI3477DV-T1-GE3

SI3477DV-T1-GE3

SI3477DV-T1-GE3

Part NumberSI3477DV-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 8A 6-TSOP

DatasheetSI3477DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 8A (Tc) 2W (Ta), 4.2W (Tc) Surface Mount 6-TSOP

To learn about the specification of SI3477DV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3477DV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3477DV-T1-GE3.
We are offering SI3477DV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI3477DV-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI3477DV
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	17.5mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	2600pF @ 6V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 4.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

SI3477DV-T1-GE3 - Related Products

	BSH201,215	Nexperia USA Inc., P-Channel 60V 300mA (Ta) 417mW (Ta) Surface Mount TO-236AB,	View
	SI2323CDS-T1-GE3	Vishay Siliconix, P-Channel 20V 6A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SI2319CDS-T1-GE3	Vishay Siliconix, P-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SQA403EJ-T1_GE3	Vishay Siliconix, P-Channel 30V 10A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, Automotive, AEC-Q101, TrenchFET®	View
	IRLML6302TRPBF	Infineon Technologies, P-Channel 20V 780mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23, HEXFET®	View
	CSD25481F4	Texas Instruments, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, NexFET™	View
	DMG4435SSS-13	Diodes Incorporated, P-Channel 30V 7.3A (Ta) 2.5W (Ta) Surface Mount 8-SOP,	View
	DMP3028LFDE-7	Diodes Incorporated, P-Channel 30V 6.8A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	IRF5803TRPBF	Infineon Technologies, P-Channel 40V 3.4A (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®	View
	SPD18P06PGBTMA1	Infineon Technologies, P-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3, SIPMOS®	View
	DMG1013UW-7	Diodes Incorporated, P-Channel 20V 820mA (Ta) 310mW (Ta) Surface Mount SOT-323,	View
	PMZB950UPELYL	Nexperia USA Inc., P-Channel 20V 500mA (Ta) 360mW (Ta) Surface Mount DFN1006B-3,	View

SI3477DV-T1-GE3 - Tags

SI3477DV-T1-GE3 SI3477DV-T1-GE3 PDF SI3477DV-T1-GE3 datasheet SI3477DV-T1-GE3 specification SI3477DV-T1-GE3 image SI3477DV-T1-GE3 India Renesas Electronics India SI3477DV-T1-GE3 buy SI3477DV-T1-GE3 SI3477DV-T1-GE3 price SI3477DV-T1-GE3 distributor SI3477DV-T1-GE3 supplier SI3477DV-T1-GE3 wholesales