SI3586DV-T1-E3

Part NumberSI3586DV-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N/P-CH 20V 2.9A 6TSOP

DatasheetSI3586DV

Package / CaseSOT-23-6 Thin, TSOT-23-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionMosfet Array N and P-Channel 20V 2.9A, 2.1A 830mW Surface Mount 6-TSOP

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SI3586DV-T1-E3 - Product Attributes

Categories

Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays

Datasheet

SI3586DV

Standard Package

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Packaging

Cut Tape (CT)

Part Status

Obsolete

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.9A, 2.1A

Rds On (Max) @ Id, Vgs

60mOhm @ 3.4A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

Power - Max

830mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP

Base Part Number

SI3586

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