SI3900DV-T1-E3
SI3900DV-T1-E3
Part Number SI3900DV-T1-E3
Description MOSFET 2N-CH 20V 2A 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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Lead Time To be Confirmed
Detailed Description Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
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SI3900DV-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Datasheet SI3900DV
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A
Rds On (Max) @ Id, Vgs 125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Base Part Number SI3900
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