SI4100DY-T1-GE3
SI4100DY-T1-GE3
Part Number SI4100DY-T1-GE3 Description MOSFET N-CH 100V 6.8A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO
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SI4100DY-T1-GE3 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4100DY Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 6.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 63mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 50V FET Feature - Power Dissipation (Max) 2.5W (Ta), 6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
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