Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI4100DY-T1-GE3

SI4100DY-T1-GE3

SI4100DY-T1-GE3

Part NumberSI4100DY-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 6.8A 8-SOIC

DatasheetSI4100DY

Package / Case8-SOIC (0.154", 3.90mm Width)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO

To learn about the specification of SI4100DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4100DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4100DY-T1-GE3.
We are offering SI4100DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI4100DY-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4100DY
Standard Package	2500
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	63mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

SI4100DY-T1-GE3 - Related Products

	DMN65D8LFB-7	Diodes Incorporated, N-Channel 60V 260mA (Ta) 430mW (Ta) Surface Mount X1-DFN1006-3,	View
	SIS780DN-T1-GE3	Vishay Siliconix, N-Channel 30V 18A (Tc) 27.7W (Tc) Surface Mount PowerPAK® 1212-8,	View
	R6042JNZ4C13	Rohm Semiconductor, N-Channel 600V 42A (Tc) 495W (Tc) Through Hole TO-247G,	View
	IXTP100N15X4	IXYS, N-Channel 150V 100A (Tc) 375W (Tc) Through Hole TO-220,	View
	IRFS4010TRLPBF	Infineon Technologies, N-Channel 100V 180A (Tc) 375W (Tc) Surface Mount D2PAK, HEXFET®	View
	CSD18535KTTT	Texas Instruments, N-Channel 60V 200A (Ta), 279A (Tc) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™	View
	IPI90N04S402AKSA1	Infineon Technologies, N-Channel 40V 90A (Tc) 150W (Tc) Through Hole PG-TO262-3, OptiMOS™	View
	IXFH75N10	IXYS, N-Channel 100V 75A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™	View
	PSMN6R0-30YL,115	Nexperia USA Inc., N-Channel 30V 79A (Tc) 55W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	IRLI3705NPBF	Infineon Technologies, N-Channel 55V 52A (Tc) 58W (Tc) Through Hole TO-220AB Full-Pak, HEXFET®	View
	IRL3803STRLPBF	Infineon Technologies, N-Channel 30V 140A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	SQ4080EY-T1_GE3	Vishay Siliconix, N-Channel 150V 18A (Tc) 7.1W (Tc) Surface Mount 8-SO, Automotive, AEC-Q101, TrenchFET®	View

SI4100DY-T1-GE3 - Tags

SI4100DY-T1-GE3 SI4100DY-T1-GE3 PDF SI4100DY-T1-GE3 datasheet SI4100DY-T1-GE3 specification SI4100DY-T1-GE3 image SI4100DY-T1-GE3 India Renesas Electronics India SI4100DY-T1-GE3 buy SI4100DY-T1-GE3 SI4100DY-T1-GE3 price SI4100DY-T1-GE3 distributor SI4100DY-T1-GE3 supplier SI4100DY-T1-GE3 wholesales